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au.\*:("CARLIN, Jean-François")

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Results 1 to 13 of 13

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Rate-equation model for coupled-cavity surface-emitting lasersBADILITA, Vlad; CARLIN, Jean-Francois; ILEGEMS, Marc et al.IEEE journal of quantum electronics. 2004, Vol 40, Num 12, pp 1646-1656, issn 0018-9197, 11 p.Article

AlInN-Based HEMTs for Large-Signal Operation at 40 GHz : GaN ELECTRONIC DEVICESTIRELLI, Stefano; LUGANI, Lorenzo; MARTI, Diego et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 10, pp 3091-3098, issn 0018-9383, 8 p.Article

Fully Passivated AlInN/GaN HEMTs With fT/fMAX of 205/220 GHzTIRELLI, Stefano; MARTI, Diego; HAIFENG SUN et al.IEEE electron device letters. 2011, Vol 32, Num 10, pp 1364-1366, issn 0741-3106, 3 p.Article

High-speed and low-noise AlInN/GaN HEMTs on SiC : Compound semiconductorsSUN, Haifeng; ALT, Andreas R; BENEDICKTER, Hansruedi et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 2, pp 429-433, issn 1862-6300, 5 p.Article

100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With FT = 144 GHzHAIFENG SUN; ALT, Andreas R; BENEDICKTER, Hansruedi et al.IEEE electron device letters. 2010, Vol 31, Num 4, pp 293-295, issn 0741-3106, 3 p.Article

102-GHz AIInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHzHAIFENG SUN; ALT, Andreas R; BENEDICKTER, Hansruedi et al.IEEE electron device letters. 2009, Vol 30, Num 8, pp 796-798, issn 0741-3106, 3 p.Article

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off OperationOSTERMAIER, Clemens; POZZOVIVO, Gianmauro; GONSCHOREK, Marcus et al.IEEE electron device letters. 2009, Vol 30, Num 10, pp 1030-1032, issn 0741-3106, 3 p.Article

GaN-based Single Mirror Light Emitting Diodes with high external quantum efficiencyZELLWEGER, Christoph M; DORSAZ, Julien; CARLIN, Jean-Francois et al.Physica status solidi. A. Applied research. 2003, Vol 200, Num 1, pp 75-78, issn 0031-8965, 4 p.Conference Paper

GaN-on-insulator technology for high-temperature electronics beyond 400 °CHERFURTH, Patrick; MAIER, David; MEN, Yakiv et al.Semiconductor science and technology. 2013, Vol 28, Num 7, issn 0268-1242, 074026.1-074026.5Article

Standard-free composition measurements of Alxln1-xN by low-loss electron energy loss spectroscopyPALISAITIS, Justinas; HSIAO, Ching-Lien; JUNAID, Muhammad et al.Physica status solidi. Rapid research letters (Print). 2011, Vol 5, Num 2, pp 50-52, issn 1862-6254, 3 p.Article

Schottky-Barrier Normally Off GaN/InAlN/AlN/GaN HEMT With Selectively Etched Access RegionJURKOVIC, Michal; GREGUSOVA, Dagmar; PALANKOVSKI, Vassil et al.IEEE electron device letters. 2013, Vol 34, Num 3, pp 432-434, issn 0741-3106, 3 p.Article

Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using ZrO2 or HfO2KUZMIK, Jan; POZZOVIVO, Gianmauro; ABERMANN, Stephan et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 3, pp 937-941, issn 0018-9383, 5 p.Article

High extraction efficiency, laterally injected, light emitting diodes combining microcavities and photonic crystalsRATTIER, Maxime; KRAUSS, Thomas F; CARLIN, Jean-Francois et al.Optical and quantum electronics. 2002, Vol 34, Num 1-3, pp 79-89, issn 0306-8919Conference Paper

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